PART |
Description |
Maker |
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1315KV18-333BZC |
18-Mbit QDRII SRAM Four-Word Burst Architecture
|
Cypress
|
CY7C1163KV18-550BZC CY7C1165KV18-400BZC CY7C1165KV |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
CY7C2263KV18-450BZXI CY7C2263KV18-550BZXI CY7C2265 |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED 36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作 36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp. NEC, Corp.
|
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的) 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc. EPCOS AG
|
CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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